Rapid Thermal Processors

Surface Science Integration excels in the deveopment of advanced Rapid Thermal Processors. Our Rapid Thermal Processors allow us to heat silicon wafers up to 1300 °C +in a matter of several seconds. This Rapid heating and slow cooling gives us the ability to modify the electrical properties of the wafers.
The Rapid Thermal Annealing process can be used to activate dopants, change the film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move or drive dopants from one film into another or from a film into the wafer substrate.

About Our Models:
The Solaris RTP Models are all manual loading benchtop RTP system for R&D and pre-production. The Solaris Models can process up to 200mm substrates at a temperature range from RT-1300 degrees+.

The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing.

The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.
The real place we have a competitive advantage is our software, we have the most versatile software package available on benchtop RTA systems.