On August 30, 2010, in Uncategorized, by Administrator

Rapid Thermal Processors Surface Science Integration excels in the deveopment of advanced Rapid Thermal Processors. Our Rapid Thermal Processors allow us to heat silicon wafers up to 1300 °C +in a matter of several seconds. This Rapid heating and slow cooling gives us the ability to modify the electrical properties of the wafers. The Rapid [...]